SEMICONDUCTOR MEMORY DEVICE PERMITTING REARRANGEMENT OF MEMORY CELL ARRAY BLOCKS

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor memory device whose yield is enhanced by a method wherein, when a memory cell array block cannot be restored by a redundancy circuit, the block is reconfigured by newly programming the address of the block. SOLUTION: A fuse F1 inside a block disable circuit BDF1 corresponding to a memory cell array block BLK1 containing many fail cells which cannot be restored by a column redundancy circuit is fused, and a row line and a column line at the block BLK1 are disabled. After that, when main fuses F2 inside programmable block selection circuits PSF2, PSF3 corresponding to passed blocks BLK2, BLK3 are fused, outputs of normal block selection circuits NBF2, NBF3 are cut off. Then, in order to give addresses of the blocks BLK2, BLK3 newly, address programming fuses F3 to F6 of the circuits PSF2, PSF3 are fused properly so as to correspond to an address which is programmed newly, and a good memory chip whose block configuration is new is obtained.