| 摘要 |
PROBLEM TO BE SOLVED: To improve yield by recovering the short circuit of a ferroelectric capacitor element. SOLUTION: Memory cells MC composed of field-effect transistors and ferroelectric capacitor elements are connected to word lines ML, bit lines BL, and plate lines PL. Pads 1, 2, 3 for applying voltage are mounted, and the pad 1 is connected to all the word lines ML through a diode Di, the pad 2 to all the bit lines BL through a diode Di, and the pad 3 to all the plate lines PL through a diode Di respectively. 5V is applied to the pad 1, the pad 2 is grounded, and 2V is applied to the pad 3 for a fixed time (such as 3 sec). Accordingly, a conductive substance short-circuiting a ferroelectric film is melted and lost, and the insulating properties of the capacitor element are recovered. |
