发明名称 Method for manufacturing a semiconductor device having a heat radiator
摘要 A highly reliable semiconductor device and a method of manufacturing the same. The semiconductor device is constituted by a semiconductor element which is disposed within a space portion defined by leads of a lead frame or fixed to a die pad of a lead frame and which has bonding pads connected to the leads through wires respectively, and a heat radiation block/plate which is made of a good thermally conductive material and which has an outer periphery having a size sufficiently to overlap the leads so that the heat radiation block/plate is disposed on the leads partly through a tape-like insulator, the semiconductor element being disposed on a center portion of the heat radiation block/plate directly or through the die pad. The semiconductor device is sealed with resin or the like with part of the leads and an end surface of the heat radiation block/plate left exposed or with part of the leads left exposed.
申请公布号 US5686361(A) 申请公布日期 1997.11.11
申请号 US19960613528 申请日期 1996.03.12
申请人 SEIKO EPSON CORPORATION 发明人 OOTSUKI, TETSUYA
分类号 H01L23/12;H01L21/56;H01L23/29;H01L23/42;H01L23/433;H01L23/50;(IPC1-7):H01L21/60 主分类号 H01L23/12
代理机构 代理人
主权项
地址