发明名称 MASK FOR X-RAY EXPOSURE
摘要 PROBLEM TO BE SOLVED: To lighten the influence of multireflection and perform highly accurate alignment by providing an opaque film region which prevents the penetration of an alignment beam, being provided on a reflection preventive film region which transmits an alignment light and besides does not reflect an alignment light. SOLUTION: An opaque film region 20 is made on a reflection preventive film in the region where a mask mark 4 is provided. A difference in level is adjusted in advance so that the luminous intensity of a diffracted light 10 may be maximum or optimum. Then, applying an incident light 9 to the mask mark 4 will let one part of the incident light transmit the mask mark 4 being a diffractive grating and diffract. Then, it is reflected on the face of a semiconductor wafer 6, and it transmits again an X-ray transmitting board 1, and become diffracted lights 21 and 22. The diffracted lights 21 and 22 are both attenuated for their luminous intensity by the opaque film region 20, so they hardly contribute to the interference with the diffracted light 10.
申请公布号 JPH09289148(A) 申请公布日期 1997.11.04
申请号 JP19960099971 申请日期 1996.04.22
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SUZUKI MASANORI;OKADA IKUO;SAITO YASUNAO
分类号 G03F1/22;G03F7/20;H01L21/027 主分类号 G03F1/22
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