| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a II-VI compound semiconductor light emitting device. SOLUTION: An n-type GaAs layer 102, an n-type ZnSe buffer layer 103, an n-type ZnMgSSe clad layer 104, a strain multiple quantum well structure 107 composed of four Zn0.8Cd0.2Se well layers 105 and five ZnS0.2Se0.8 barrier layers 106, a p-type ZnMgSSe clad layer 108, and a p-type ZnSe contact layer 109 are stacked on a GaAs substrate 101. As the ZnSSe barrier layer 106 having an S composition ratio of 0.2 is used, a tensile strain acting on the barrier layer compensates a compression strain acting on the well layer. Therefore, the strain acting on the strain multiple quantum well structure 107 and the vicinity thereof is offset almost perfectly, thereby providing a non-strain state as a whole. Thus, generation of and increase in defects in the well layers 105 are restrained, thus enabling improvement in reliability of the device. |
