发明名称 PRODUCTION OF CHROMIUM BASED SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To stabilize the discharge characteristics at the time of sputtering a chromium based sputtering target by making the dispersion state of the metallic chromium and chromium oxide in the target dense and uniform. SOLUTION: This process for producing the chromium based sputtering target comprises subjecting the molding of a powder mixture composed of chromium oxide and carbon to reduction calcination (vacuum calcination or atmosphere calcination), then pulverizing the mixture and subjecting the molding obtd. by this pulverized powder to calcination (vacuum calcination or atmosphere calcination). In the process for producing the chromium sputtering target described above, the powder mixture composed of the chromium oxide and the carbon consists respectively of Cr2 O3 , powder and C powder and the mixing weight of the C powder exists in a range of 3.2 to 18.1% by weight.
申请公布号 JPH09279334(A) 申请公布日期 1997.10.28
申请号 JP19960088476 申请日期 1996.04.10
申请人 TOSOH CORP 发明人 KUROSAWA SATOSHI;MOCHIZUKI OSAMU;ONUKI YUKIO;KONDO AKIO
分类号 G02F1/1335;C23C14/34 主分类号 G02F1/1335
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