| 摘要 |
A specially configured intermediate structure used in a stage of selective anodization during the manufacture of a circuit. The specially configured intermediate structure includes: a metal line having at least two edges; and a photoresist mask applied over a portion of the metal line that is to remain unanodized. A configuration of each of the edges of the metal line is such that the length of each edge under the mask is greater than the length of the mask. The extra length of the specially configured edge prevents a problem in later stages of the circuit manufacture due to unwanted, and practically unpreventable, seepage of the anodic oxidation chemical under the mask, along the edge, by the anodic oxidation chemical.
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