发明名称 Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
摘要 A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti-Al-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The exotic-nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
申请公布号 US5679980(A) 申请公布日期 1997.10.21
申请号 US19960770066 申请日期 1996.12.19
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SUMMERFELT, SCOTT R.
分类号 H01L27/04;H01L21/02;H01L21/285;H01L21/822;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L29/92;(IPC1-7):H01G4/06;H01L29/12 主分类号 H01L27/04
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