Verfahren zur Herstellung ohmscher Kontakte auf einem SiC-Halbleiterkörper,申请号DE19944406769-传众专利搜索

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发明名称	Verfahren zur Herstellung ohmscher Kontakte auf einem SiC-Halbleiterkörper
摘要
申请公布号	DE4406769(C2)	申请公布日期	1997.10.16
申请号	DE19944406769	申请日期	1994.03.02
申请人	DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE	发明人	KOREC, JACEK, DR.-ING., 64546 MOERFELDEN-WALLDORF, DE;NIEMANN, EKKEHARD, DIPL.-ING., 63477 MAINTAL, DE
分类号	H01L21/04;H01L29/24;H01L29/45;(IPC1-7):H01L21/283;H01L21/308;C23F4/00;H01L21/265	主分类号	H01L21/04
代理机构		代理人
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地址

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