Mfg. low-leaking current electrode for LPCVD titania film

摘要

In a process for fabricating electrodes for capacitor devices of semiconductor memory having low leakage, a titanium oxide film is deposited over a silicon substrate and the oxide annealed, a layer of top electrode is deposited over the annealed film and annealed. The electrode may be W, Mo or a nitride of W, Ta or Ti. The substrate may be n + silicon or polysilicon, the first annealing step conducted in dry O 2 at 800{C, and the second in N 2 at 400-800{C.