| 摘要 |
PROBLEM TO BE SOLVED: To improve wiring of tungsten polycide. SOLUTION: A WSix layer 15 is formed on a polysilicon layer 14, and an Si3 N4 film 16 is formed on the WSix layer 15. A conductive impurity As<+> is introduced from a position above the Si3 N4 film 16 so as to penetrate at least the interface between the Si3 N4 film 16 and the WSix layer 15, and a photoresist is formed and patterned into a mask on the Si3 N4 film 16. Then, patterning is performed by etching the Si3 N4 film 16, the WSix layer 15 and the polysilicon layer 14 with the photoresist mask, thus forming a wiring layer of tungsten polycide. |
