发明名称 MANUFACTURE OF FIELD EMISSION ELECTRON SOURCE
摘要 <p>PROBLEM TO BE SOLVED: To provide a field emission electron source which can provide high electric current density. SOLUTION: A conductive projected fine structure 3 is formed on the surface of an electrode 2 formed on the surface of a substrate 1 and an electrode layer 6 to be a gate is formed in the peripheral area through an insulating layer 5. A plurality of projected parts 4 to be a cold cathode are formed in the surface of the projected fine structure 3. Positive voltage is applied to the cathode and to the gate electrode, a large quantity of electrons are emitted out of the tip parts of a plurality of the projected parts 4 due to the field effect.</p>
申请公布号 JPH09270228(A) 申请公布日期 1997.10.14
申请号 JP19960078538 申请日期 1996.04.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HORI YOSHIKAZU;KOGA KEISUKE
分类号 H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J1/30 主分类号 H01J9/02
代理机构 代理人
主权项
地址