发明名称 |
MANUFACTURE OF FIELD EMISSION ELECTRON SOURCE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field emission electron source which can provide high electric current density. SOLUTION: A conductive projected fine structure 3 is formed on the surface of an electrode 2 formed on the surface of a substrate 1 and an electrode layer 6 to be a gate is formed in the peripheral area through an insulating layer 5. A plurality of projected parts 4 to be a cold cathode are formed in the surface of the projected fine structure 3. Positive voltage is applied to the cathode and to the gate electrode, a large quantity of electrons are emitted out of the tip parts of a plurality of the projected parts 4 due to the field effect.</p> |
申请公布号 |
JPH09270228(A) |
申请公布日期 |
1997.10.14 |
申请号 |
JP19960078538 |
申请日期 |
1996.04.01 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HORI YOSHIKAZU;KOGA KEISUKE |
分类号 |
H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J1/30 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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