| 发明名称 |
VERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN IN CMOS-TECHNIK MIT 'LOCAL INTERCONNECTS' |
| 摘要 |
A method of fabricating CMOS devices with local interconnects is disclosed which is performed in two stages. In the first stage, a SALICIDE process is carried out, and in the second stage, the local interconnects are formed. |
| 申请公布号 |
DE59307261(D1) |
申请公布日期 |
1997.10.09 |
| 申请号 |
DE1993507261 |
申请日期 |
1993.06.09 |
| 申请人 |
DEUTSCHE ITT INDUSTRIES GMBH, 79108 FREIBURG, DE |
发明人 |
WILMSMEYER, KLAUS, D-7819 DENZLINGEN, DE |
| 分类号 |
H01L21/768;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
