| 摘要 |
PURPOSE:To reduce the size of a memory cell by forming a switching transistor on a columnar projection part while forming the capacity thereunder, whereby the positions of the switching transistor and the capacity are overlapped. CONSTITUTION:A switching transistor consists of a gate electrode 8, which constitutes a word line buried in a hollow part of a columnar projection part 2 through a gate insulating film 4, and a source and a drain 5 and 6 formed the columnar projection part 2 while being separated in the up and down directions. Accordingly, the switching transistor is formed on the columnar projection part 2 and thereunder the capacity 13 is formed and the positions of the switching transistor and the capacity seen from the top are overlapped. Thereby, the size of a memory cell can be reduced. |
