| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the increase in a capacitor capacity value for notably increasing the yield thereof within a semiconductor memory having a stuck type capacitor. SOLUTION: This memory is provided with a stuck type capacitor composed of accumulation electrodes 9 formed on interlayer insulating films 7 on a semiconductor substrate 1, plate electrodes 5 to be the counter electrodes to these electrodes 9 and capacitor insulating films 2. At this time, the first contact holes 8 are formed so as to reach the diffused layers 5 positioned on the lower layers of said interlayer insulating films 7 while the second contact holes 8a are formed on the upper part of these films 7 to be arranged so as to connect to the first contact holes 8 in the vertical direction so that a connecting conductor material may be buried in the first contact holes 8 and the second contact holes 8a to form these accumulation electrodes 9. |
