发明名称 |
Non-volatile semiconductor storage apparatus |
摘要 |
A non-volatile semiconductor storage apparatus which incorporates second bit lines connected to the sources of memory cell transistors arranged in a column direction, formed separately from the layer of first bit lines connected to the drains of the memory cell transistors arranged in a column direction. The apparatus is equipped with a system which can erase data byte by byte without enlarging the whole size irrespective of the provision of decoders in the first and second bit lines. A non-volatile semiconductor storage apparatus which erases data byte by byte by selecting a predetermined group of memory cell transistors by the source lines and the word lines connected to the diffusion area in the groups of memory cell transistors.
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申请公布号 |
US5671177(A) |
申请公布日期 |
1997.09.23 |
申请号 |
US19960731388 |
申请日期 |
1996.10.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
UEKI, HIROSHI |
分类号 |
G11C17/00;G11C16/02;G11C16/04;G11C16/06;G11C16/08;H01L21/8247;H01L27/115;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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