| 摘要 |
PROBLEM TO BE SOLVED: To suppress the change of the threshold voltage owing to the perpetration phenomenon to a p-chanel by means of BF2 , and leak current owing to a boundary potential in a gate and a gate insulating film by means of B when ions are implanted to a p-chanel field effect transistor. SOLUTION: F is ion-implanted from an oblique direction with acceleration voltage 10-100keV and implanting quantity 1×10<11> -1×10<16> cm<-2> in a gate 11. A low intensity layer 8 containing B of 2×10<12> -2×10<16> cm<-3> and a terminal layer 13 containing F of 2×10<12> -2×10<16> cm<-3> are formed under the gate insulating film 2. High resistance layers 12 are formed at the lower end parts of the gate 11. Then, the reduction of the valid voltage and insulation destruction at the gate end part owing to the enlargement of a distance are prevented and the boundary potential causing leak current is regulated by means of intense connection energy of F.
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