发明名称 |
Method of growing a silicon single crystal thin film in vapor phase |
摘要 |
<p>A method of producing a silicon single crystal thin film having a smooth surface in a stable manner in vapor-phase growth. A silicon single crystal thin film is grown by mixing silicon chloride raw material with hydrogen gas to form a process gas and supplying the process gas to a semiconductor single crystal substrate at a growth temperature, wherein the thin film is grown at a growth rate equal to or higher than 80 % of the maximum growth rate at the growth temperature. <IMAGE></p> |
申请公布号 |
EP0794561(A1) |
申请公布日期 |
1997.09.10 |
申请号 |
EP19970301076 |
申请日期 |
1997.02.19 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
HABUKA, HITOSHI |
分类号 |
C30B25/14;C30B25/02;C30B29/06;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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