发明名称 |
Heterostructure laser |
摘要 |
The specification describes a heterostructure laser utilizing GaAs based materials that emits at 0.98 mu m and is thus suitable for pumping an erbium doped fiber waveguide amplifier. The composition and asymmetrical structure of the cladding layers of the laser is designed to give exceptional electrical and optical confinement without the high levels of aluminum that are found to reduce the lifetime of high performing prior art devices. <IMAGE> |
申请公布号 |
EP0794601(A1) |
申请公布日期 |
1997.09.10 |
申请号 |
EP19970301249 |
申请日期 |
1997.02.25 |
申请人 |
AT&T CORP. |
发明人 |
BAILLARGEON, JAMES NELSON;YI CHO, ALFRED;CHENG, KEH-YUNG |
分类号 |
H01S3/094;H01S3/06;H01S3/10;H01S5/00;H01S5/20;H01S5/32;H01S5/323;H01S5/343 |
主分类号 |
H01S3/094 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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