| 摘要 |
PROBLEM TO BE SOLVED: To prevent a current-block layer from widely covering a mask film by providing a light-confinement layer and a current-blocking layer formed thereon as an antioxidant layer for specifying a layer thickness of a first conductive type. SOLUTION: After etching a p-type clad layer 7 into a shape consisting of a flat part 7a and a ridge part 7b in a state through a mask film 21 by wet etching, an n-type light-confinement layer 10 and an n-type current-blocking layer 11 are continuously grown in this order in a state through the mask film 21 by an MOCVD method. Since an n-type GaAs current-blocking layer 11 is formed on a mask film 21 in a state of being scatteredly dotted with undesired materials, some GaAs grows with dotted materials as nuclei, however, since the layer thickness of the n-type GaAs current block layer 11 does not exceed 0.4μm, the GaAs layer existing on the mask layer 21 does not reach a half region of the mask layer 21 so as to prevent covering in the wide range.
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