| 摘要 |
PROBLEM TO BE SOLVED: To maintain oxide film withstand voltage characteristics of a silicon wafer to be a specified value, by heat-treating a silicon wafer for manufacturing an MOS device, at a specified treatment temperature for a specified time, in a hydrogen atmosphere or a mixed gas atmosphere of hydrogen and inert gas, just before a gate oxide film is formed. SOLUTION: A silicon wafer 2 is accommodated in a vessel 1 of quartz. Hydrogen whose concentration is 100% is sealed at a normal pressure. Heat treatment is performed at a temperature of 950-1200 deg.C, for 1-60 seconds, by using an infrared lamp 3 installed outside the vessel 1. The wavelength of the infrared amp 3 is 0.1-4μm. The treatment temperature is 950 deg.C or higher, and preferably is 1000-1200 deg.C. Thereby the dielectric withstand voltage of a gate oxide film which is formed on the wafer surface layer continuously to the hydrogen treatment can be maintained to be a sufficiently excellent value. The application to a cluster tool is possible.
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