| 摘要 |
<p>An n-channel type field effect transistor (22) and a p-channel type field effect transistor (23) are fabricated on a p-type well (20a) and an n-type well (20b), respectively. The arsenic-doped gate electrode (22b') of the n-channel type field effect transistor is thinner than the boron-doped gate electrode (23b') of the p-channel type field effect transistor so that the arsenic and the boron, which have different diffusion coefficients, both diffuse to the bottom of the gate electrodes during a rapid annealing.</p> |
