| 摘要 |
There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gas containing a halogen gas and/or a halogen compound gas such as hydrogen fluoride, hydrogen chloride, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride into contact with a cleaning agent comprising metal oxides composed principally of copper (II) oxide and manganese (IV) oxide that are spreadingly and adhesively incorporated with sodium formate so as to remove a harmful component from the harmful gas. According to the cleaning process of the present invention, it is made possible to remove harmful components from the harmful gas in extremely high efficiency at ordinary temperature, dispensing with heating or cooling irrespective of the concentration of the harmful components. The cleaning capacity of the cleaning agent is favorably maintained without deterioration even when the harmful gas is in a dry state. Furthermore, the cleaning agent can remove the harmful gas in safety without a fear of causing fire or elimination of the harmful component therefrom. The cleaning process characterized by the above items is highly useful and significant from the industrial point of view in that it is well suited for cleaning exhaust gases from semiconductor manufacturing process as well as emergency countermeasure against the leakage of harmful gas from a gas cylinder.
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