Method for improving the intermediate dielectric profile, particularly for non-volatile memories

摘要

A method for improving the intermediate dielectric profile, particularly for non-volatile memories constituted by a plurality of cells, which comprises the following steps: -- forming field oxide regions (14) and drain active area regions (15) on a substrate (1); -- forming word lines (16) on the field oxide regions (14); -- depositing oxide to form oxide wings (13) that are adjacent to the word lines (16); characterized in that it comprises the following additional steps: -- opening, by masking (20), source regions (18) and the drain active area regions (15), keeping the field oxide regions (14) that separate one memory cell from the other, inside the memory, covered with resist; and -- removing field oxide (14) in the source regions (18) and removing oxide wings (13) from both sides of the word lines (16).