INSULATED GATE FIELDDEFFECT TYPE TRANSISTOR,申请号JP19780074392-传众专利搜索

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发明名称	INSULATED GATE FIELDDEFFECT TYPE TRANSISTOR
摘要
申请公布号	JPS551141(A)	申请公布日期	1980.01.07
申请号	JP19780074392	申请日期	1978.06.19
申请人	NIPPON ELECTRIC CO	发明人	YAMADA SEISHI
分类号	H01L29/78;H01L21/331;H01L29/04;H01L29/06;H01L29/73	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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