Wafer manufacturing process

摘要

The method involves repeated grinding of the end surface of a single crystal (1) with a grinding tool and separating a semiconductor wafer from the crystal with a separating tool, whereby the grinding produces a residue of defined thickness. The wafer is separated in a plane as nearly parallel as possible to the ground surface. Part of the surface of an auxiliary body (2) is also ground; the thickness of the material removed from this body corresponds essentially to the material removed from the crystal. The auxiliary body is cut in the cutting plane by the separating tool to produce a cut section (9) with a ground part and an unground part. The ground quantity is determined as the distance between the ground surface of the auxiliary body and its surface before grinding or as the difference of the thickness (B) of the cut section in the unground part and the wafer thickness (A).