| 摘要 |
A Schottky barrier diode (5) comprises a bulk single crystal semiconductor material substrate (10), an optional first epitaxial layer (15) of n-type conductivity semiconductor material formed upon the substrate, and a second epitaxial layer (21) of n-type conductivity semiconductor material formed upon the first epitaxial layer. The second epitaxial layer has formed on it a Schottky contact (41) having the periphery of which is defined by the edges of the Schottky contact. The second epitaxial layer has formed in it regions (31) of p-type conductivity semiconductor material formed wherein the regions (31) are formed about the periphery of the Schottky contact (41). The diode also has an ohmic contact (46) formed on the substrate opposite the epitaxial layers. The epitaxial layers of the diode form a mesa having sidewalls (56) which define the periphery of the diode and extend downward through the regions (31) of p-type conductivity semiconductor material and the epitaxial layer (15, 21). A method of reducing leakage current and increasing breakdown voltage in a Schottky barrier diode by forming p-type regions about the periphery of the Schottky contact etching through the p-type regions to form a mesa. |
