| 发明名称 |
Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device |
| 摘要 |
An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.
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| 申请公布号 |
US5656820(A) |
申请公布日期 |
1997.08.12 |
| 申请号 |
US19950560029 |
申请日期 |
1995.11.17 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MURAKOSHI, ATSUSHI;SUGURO, KYOICHI;HATANAKA, TATSUYA |
| 分类号 |
C23F4/00;H01J27/02;H01J27/08;H01J27/14;H01J27/16;H01J27/18;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J27/02 |
主分类号 |
C23F4/00 |
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