发明名称 DISCHARGE SYSTEM STRUCTURE OF FILM FORMATION TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a discharge system structure constituted to depollute an unreacted org. metallic material on the downstream side of pumps without decomposing this material within these pump. SOLUTION: The discharge system structure of a film formation treating device 2 for subjecting a work to film formation by using the org. metallic material 36 is constituted to have a discharge passage 32 which is connected to the film formation treating device and is used to pass discharge gases, the turbo molecular pump 36 which is interposed in the upstream side of this discharge passage, internally has many rotary vanes and has an inert gas supplying means for supplying an inert gas to the bearing parts of these rotor vanes, the dry pump 38 which is interposed in the downstream side of this turbo molecular pump, a cooling means 100 which is disposed in this dry pump and cools the org. metallic material to the temp. lower than the thermal decomposition temp. of the material and a depolluting means which is disposed on the downstream side of the dry pump and depollute the org. metallic material included in the discharge gases. As a result, the thermal decomposition of the org. metallic material in both pumps is averted and is removed by the depolluting means on the downstream side.
申请公布号 JPH09202973(A) 申请公布日期 1997.08.05
申请号 JP19960030059 申请日期 1996.01.24
申请人 TOKYO ELECTRON LTD 发明人 HORIUCHI TAKASHI;KOBAYASHI NORIHISA;ITO MASAHIDE;GOMI HISASHI
分类号 C23C16/44;B01D50/00;H01L21/205;H01L21/285 主分类号 C23C16/44
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