| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten a write time by providing the circuit performing the transition of the level of data, circuits performing the writing of data and a data recording part indicating whether a data writing is of a positive state or a reversal state to reduce the number of cells in which writing is performed. SOLUTION: The output signal S9 of a decision circuit 9 and the signal RS9 obtained by inverting the signal S9 with an inverter 10 are inputted to respective write data selection circuits 60-63 and an auxiliary write data selection circuit 64. When the signal S9 is H, latched data of corresponding data latches 50-54 are inverted to be outputted to corresponding bit lines BL0-BL3, SBL. Consequently, in corresponding auxiliary memory cells SMCs, the number of cells in which '0' data inducing FN tunnelling pheneomena in memory cells for data MCs of all blocks of a corresponding one row are to be written is larger than a majority. That is, since the number of cells in which the '0' data are to be written becomes a number smaller than the majority of the number of memory cells MCs being in one page, the write time is shortened.</p> |
