TiSi2/TiN clad interconnect technology

摘要

A TiSi2/TiN clad LI strap process and structure are disclosed which combine the advantages of both TiSi2 and TiN LI processes. According to the invention, the retention of a thin TiN layer between the local interconnect and contacts provides a diffusion barrier against counterdoping and relaxes the thermal budget for subsequent processing.