| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage device which can reduce a consumed current in a semiconductor memory. SOLUTION: A change in an address in at least one out of a row direction and a column direction is detected by transition-detection control circuits 13, 14, a sense amplifier 11 is made active on the basis of its detection, and the sense amplifier is made inactive after the simulation time to be set according to whether the change in the address signal is the row direction or the column direction and the sense simulation time required for the sense operation of storage information in a memory cell have elapsed. |
