| 摘要 |
PROBLEM TO BE SOLVED: To provide the masking which allows less chance to contaminate a device during the manufacture of the semiconductor device. SOLUTION: In the masking of a substrate 11 during the semiconductor manufacture which includes a step to provide a substrate 10, which is a silicon substrate, the substrate 11 is hydrogenerated 12, a metal mask 15 is placed on the surfaces 11 and 12, and the growing area 16 and a non-masking part 17 are specified on the surfaces 11 and 12. Then, the surfaces 11 and 12 are exposed to beams 21 which have a wavelength of approximately 185nm (oxygen absorption peak), and on the surfaces 11 and 12, ozone is generated at least on the non-masking area 17. Thus, on the non-masking part 17 on the surfaces 11 and 12, an oxide film 20 is grown, and the metal mask 15 is removed. Then, the oxide film 20 is permitted to function as a mask for the further operation and is easily removed at that position by heating. |
