MOSFET device having controlled parasitic isolation threshold voltage

摘要

A MOSFET has shallow trenches of a thick oxide for isolating the MOSFET device from a surrounding substrate. The MOSFET has a gate wiring layer that includes co-aligned metallurgy of a predetermined work function at regions where the gate wiring layer passes over the oxide of the isolation trenches. The co-aligned metallurgy of predetermined work function is operative to increase the parasitic threshold voltage associated with the MOSFET's parasitic leakage currents.