| 摘要 |
PURPOSE:To prevent contamination by metallic impurities and to stably attain high quality by specifying the oxygen content of an SiC-based member for production of a semiconductor consisting of SiC and metallic Si. CONSTITUTION:A mixture of high purity SiC powder with high purity graphite powder and an oxygen source compd. such as silicone resin having Si-O bonds is granulated, compacted and heated at about 800 deg.C in gaseous N2 to obtain a calcined body. This calcined body is heated to about 1,500 deg.C in vacuum and molten high purity metallic Si is impregnated into the calcined body. The resulting Si impregnated body is sintered at 1,600-1,800 deg.C to produce the objective SiC-based member for production of a semiconductor contg. >=50ppm oxygen and having a structure in which SiC forms a three-dimensional continuous phase as the matrix and many metallic Si islands are separately dispersed in the continuous phase. |
