| 摘要 |
PURPOSE:To prevent the disconnection of a conducting layer of aluminum wiring in a step-difference part of a contact hole, and obtain a semiconductor device whose yield is improved by eliminating a part of interlayer insulating film in the vicinity of a part where a conductor layer in the highest part comes into contact with a conductor layer which is not in the highest part of a plural ity of conductor layers. CONSTITUTION:After a usual fourth layer polysilicon 18 is formed in a semicon ductor storage device, a part or the whole part of an interlayer insulating films 20, 21, 22 in a region containing the forming part of an aluminum contact hole is eliminated. In this constitution, the depth of the contact hole (d') becomes small as compared with the conventional depth (d), so that the step difference is relieved and the disconnection of an aluminum wiring 19 can be prevented. On the other hand, since a second layer polysilicon 16 acts as an etching mask, the insulating films of a first layer polysilicon 15 and the second layer polysilicon 16 are not decreased, and the deterioration of dielectric breakdown strength is not caused. Hence, the disconnection of conductor layers such as aluminum wiring can be prevented, and the yield is improved. |
