A semiconductor laser device and a method of growing a semiconductor laser device

摘要

A semiconductor laser has an n-type cladding layer (12), a lower optical guiding layer (13), an active layer (14), an upper optical guiding layer (15), a p-type cladding layer (17) and a p-type capping layer (18). A thin, heavily p-type delta doped layer (16) is provided at the interface between the upper optical guiding layer and the p-type cladding layer. This increases the potential barrier for electrons passing from the upper optical guiding layer to the p-type cladding layer, thereby reducing the leakage of electrons into the p-type cladding layer.