发明名称 |
Semiconductor device with heterojunction |
摘要 |
In the present invention, atoms are implanted into the surface of at least a crystalline silicon semiconductor of one conductivity type in forming a heterojunction, thereby to bring the surface of the crystalline silicon semiconductor into amorphous to form a substantially intrinsic amorphous silicon layer. An amorphous silicon layer or a microcrystalline silicon layer of an opposite conductivity type is deposited on the amorphous silicon layer, whereby a heterojunction interface is formed in a region deeper than a deposition interface.
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申请公布号 |
US5648675(A) |
申请公布日期 |
1997.07.15 |
申请号 |
US19950521114 |
申请日期 |
1995.08.29 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TERADA, NORIHIRO;HARADA, YASUKI |
分类号 |
H01L29/73;H01L21/265;H01L21/331;H01L21/336;H01L29/205;H01L29/737;H01L29/786;H01L31/04;H01L31/068;H01L31/072;H01L31/18;(IPC1-7):H01L31/075 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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