Method for integrating a Bragg grating localized in a semiconductor

摘要

In order to form a Bragg grating in a semiconductor component, a process of moist etching is carried out through a resin mask which is developed after a holographic exposure. The regions of the grating situated in the front of the component can consequently achieve an etching which is deeper than that of other regions. In order to compensate for this phenomena, the process also includes a complementary irradiation through a second mask (E) placed at a distance from the resin mask (7) which defines the position of the grating. This second mask has a partially reflective region, the reflectivity being achieved by the use of chromium on this mask.