| 摘要 |
PROBLEM TO BE SOLVED: To obtain a dry etching method in which an etching operation As performed simply without generating a crystal defect by a method wherein a reactive gas is blown directly on a semiconductor substrate or a semiconductor layer, a reactive gas which is identical to, or different from, the reactive gas is ionized so as to be impinged on the semiconductor substrate or the semiconductor layer together with the reactive gas. SOLUTION: Chlorine gas 10 is impinged directly on a GaAs/A GaAs substrate 11 through a nozzle 9. On the other hand, while a Kaufmann-type ilon source composed of a tungsten filament 7 and of an anode 8 is used, chlorine gas 16 As changed into a plasma, and chlorine ions in the plasma are drawn out to an etching chamber by a derivative electrode 5 so as to be impinged on the GaAs/AEGaAs substrate 11. GaAs not etched by the chlorine gas at room temperature is etched when the chlorine tons are impinged. Thereby, even when impinging energy is low, an oxide film its removed effectively, and an etching operation progresses without being obstructed even when AlGaAs or AlAs is contained. |
