A method of producing diamond crystal growth on a seed crystal (24) is provided. The method includes the steps of providing a seed crystal (24) containing at least one twin plane (26) and re-entrant growth surfaces (28) associated therewith and applying high temperature/high pressure synthesis conditions to the seed crystal (24) to cause diamond growth to occur preferentially on the re-entrant surfaces (28). The diamond growth on the seed crystal (24) results in a diamond crystal being produced which has an aspect ratio greater than 1. <IMAGE>
申请公布号
EP0780153(A1)
申请公布日期
1997.06.25
申请号
EP19960309236
申请日期
1996.12.18
申请人
DE BEERS INDUSTRIAL DIAMOND DIVISION (PROPRIETARY) LIMITED