| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process for producing an array substrate capable of preventing the occurrence of pattern defects of pixel electrodes in a photoprocess and easily deciding the end point of etching of the second semiconductor films of TFTs(thin-film transistors). SOLUTION: A second n<+> type amorphous silicon film 29" having the same film thickness as the thickness of an n<+> type amorphous silicon film which is the second semiconductor film 27 of the TFTs 35 is laminated on a transparent conductive film which is made into the pixel electrodes 28'. The film formation of metallic films 30, 31, the formation of the source electrodes 33, drain electrodes 34 of the TFTs 35, the connection to the drain electrodes 34 and the pixel electrodes 28', the exposure of the pixel parts of the pixel electrodes 28', etc., are thereafter executed.</p> |
