发明名称 DETECTOR OF END POINT IN PLASMA ETCHING EQUIPMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide an end point detecting apparatus in plasma etching equipment whereby the electric field intensity between a plasma and bracket in a reactor chamber is reduced to avoid the contamination due to adsorption of process by products. SOLUTION: This apparatus comprises a sensing window attached to the wall of a reactor chamber 10, optical cable to transmit a light generated during an etchings step through this window 20 to a measuring means 50 outside the chamber 10, and bracket 40 fixed to the outside face of the reactor chamber wall 12 to fix the window 20 and cable 30. The window 20 is fixed so as to protrude outside from the chamber and installed with ensuring a specified space between the window and bracket 40.</p>
申请公布号 JPH09162179(A) 申请公布日期 1997.06.20
申请号 JP19960187806 申请日期 1996.07.17
申请人 SAMSUNG ELECTRON CO LTD 发明人 ISHI SHIYOUKIYOKU;BOKU SHINHO;BOKU SHINHIYUN;KIN MASATANE
分类号 H05H1/46;C23F4/00;G01N21/68;H01L21/302;H01L21/3065;H01L21/66;(IPC1-7):H01L21/306 主分类号 H05H1/46
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