| 摘要 |
FIELD: integrated circuits built around bipolar transistors; bipolar transistors with dielectric near-surface regions of base and emitter. SUBSTANCE: process involves shaping of local buried layer in silicon substrate, deposition of epitaxial layer, doping (at points of future location of near-surface regions of transistor base and emitter) with base impurity before forming insulated dielectric, forming of insulated dielectric, building of base bounded by dielectric region, deposition of polycrystalline silicon layer doped with emitter impurity, forming of polycrystalline electrode, building of emitter obtained by diffusion from polycrystalline electrode and bounded with dielectric region at least on one side. Base is pre-expanded in dielectric near-surface region under emitter. Emitter size (width) is reduced down to that dictated by image transfer method, which is at present 0.5-0.2 mcm. EFFECT: eliminated pinch-through of base; reduced size of emitter. |
