| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent faults by providing redundancy to wiring of a thin-film semiconductor device. SOLUTION: A thin film transistor 2, having a source area S and a drain area D, is integrated on an insulated substrate 1. The thin film transistor 2 is electrically connected by a plurality of wires including a signal wire 6 and a gate wire 3. A plurality of conductive layers assigned to the respective wires 3, 6 and the source area S/drain area D are electrically separated from each other via inter-layer insulated films 4 and 7. The signal wire 6 has a multiple structure utilizing a plurality of conductive layers at an intersection with the gate wire 3. The multiple structure comprises a main conductive layer of a metal film assigned to the signal wire 6 and a sub conductive layer basically assigned to another wire than the signal wire 6. The sub conductive layer comprises a semiconductive film 5 which belongs to the same layer of the source area S/drain area D. the main conductive layer and the sub conductive layer are inter-connected via contact holes 8 formed through the inter-layer insulated film 7 between these layers. Thus, a desired redundancy is obtained in the wiring.</p> |
