发明名称 ELECTROSTATIC ATTRACTING ELECTRODE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To easily manufacture electrostatic attracting electrodes which can attract wafers with accuracy even when the diameter of the wafers increases. SOLUTION: After a recessed section in which a second electrode 12 is fitted is provided on a first electrode 11 and an insulating film 3 is formed in the recessed section, the electrode 12 is fitted in the recessed section and the surfaces of the electrodes 11 and 12 are machined so that the surfaces can be flushed with each other. Then an electrostatically attracting film 14 is formed on the surfaces of the electrodes 11 and 12 by thermal spraying and the film 14 is polished to a prescribed thickness. Therefore, the electrodes 11 and 12 can easily attract a wafer 9 having a large diameter.</p>
申请公布号 JPH09148420(A) 申请公布日期 1997.06.06
申请号 JP19960247537 申请日期 1996.09.19
申请人 HITACHI LTD 发明人 TAKAHASHI NUSHITO;ITO YOICHI;KANAI SABURO;SUGANO SEIICHIRO
分类号 B23Q3/15;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 主分类号 B23Q3/15
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