| 摘要 |
A CVD device for treating a semiconductor wafer (W) is provided with a treating chamber (2) and a stage (3). A heating resistor (31) is buried in the stage (3) and a wafer is placed on the upper surface of the stage (3). A first supporting means (4) having three vertical lifter pins (41, 42, and 43) and a second supporting means (5) having three vertical lifter pins (51, 52, and 53) are incorporated in the stage (3). The wafer is lowered from a transfer position to the surface by means of the second supporting means. The wafer is heated to a treating temperature on the surface by the contact heating and lifted to a treating position which is slightly higher than the surface by means of the first supporting means. In the treating position, the wafer is heated contactlessly by the radiant heat from the surface and maintained at the treating temperature. In this state, a treating gas is supplied and a polysilicon film is formed on the wafer.
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