| 摘要 |
<p>PROBLEM TO BE SOLVED: To form metallic films consisting of a sufficiently small particle size by increasing a film forming speed, thereby controlling the particle size in the metallic films. SOLUTION: The film forming speed of the metallic film is so controlled as to be lower than the prescribed speed in the sputtering method for forming the metallic films by depositing metallic atoms on the surface of a material to be treated in a vacuum atmosphere, by which the metallic films consisting of the fine particles of <=20nm grain size are formed. The desired film forming speed at this time is specified to about >=300nm/min, by which the metallic films consisting of an Al alloy is formed. Further, the film forming speed is so controlled as to be made higher than the prescribed speed similar to the metal films consisting of Cr, Ta and Mo, by which the desired film quality is obtd.</p> |
