发明名称 |
SPUTTERING TITANIUM TARGET AND METHOD FOR PRODUCING THE SAME |
摘要 |
A titanium target for sputtering high in film making efficiency in a contact hole. The crystallization on the target face is caused to be orientated so that the X-ray diffraction strength of the (10 -10) and / or (11 -20) vertical to the close-packed filling face may become 1.1 times or more in a case of the random orientation, and the X-ray diffraction strength of the (0002) parallel to the close-packed filling face may become 1 time or lower in a case of the random orientation. A direction of the spatter grains jumping out of the target face is controlled in a direction vertical to the target face. <IMAGE> |
申请公布号 |
EP0757116(A4) |
申请公布日期 |
1997.05.21 |
申请号 |
EP19960905067 |
申请日期 |
1996.03.12 |
申请人 |
SUMITOMO SITIX CORPORATION |
发明人 |
OHNISHI, TAKASHI;YOSHIMURA, YASUNORI;OKAMOTO, SETSUO |
分类号 |
C22F1/18;C23C14/34;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C22F1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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