发明名称 SPUTTERING TITANIUM TARGET AND METHOD FOR PRODUCING THE SAME
摘要 A titanium target for sputtering high in film making efficiency in a contact hole. The crystallization on the target face is caused to be orientated so that the X-ray diffraction strength of the (10 -10) and / or (11 -20) vertical to the close-packed filling face may become 1.1 times or more in a case of the random orientation, and the X-ray diffraction strength of the (0002) parallel to the close-packed filling face may become 1 time or lower in a case of the random orientation. A direction of the spatter grains jumping out of the target face is controlled in a direction vertical to the target face. <IMAGE>
申请公布号 EP0757116(A4) 申请公布日期 1997.05.21
申请号 EP19960905067 申请日期 1996.03.12
申请人 SUMITOMO SITIX CORPORATION 发明人 OHNISHI, TAKASHI;YOSHIMURA, YASUNORI;OKAMOTO, SETSUO
分类号 C22F1/18;C23C14/34;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 主分类号 C22F1/18
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