发明名称 |
A method of chemically mechanically polishing an electronic component |
摘要 |
<p>A method of forming interlevel studs in an insulating layer on a semiconductor wafer. First, a conformal BPSG layer is formed on a Front End of the Line (FEOL) semiconductor structure. Vias are opened through the BPSG layer to the FEOL structure. A layer of poly is formed (deposited) on the BPSG layer, filling the vias. The poly layer may be insitu doped poly or implanted after it is deposited. The wafer is annealed to diffuse dopant from the poly to form diffusions wherever the poly contacts the substrate. A non-selective slurry of colloidal silica and at least 1% ammonium hydroxide is used to chem-mech polish the poly from the BPSG layer and, simultaneously, planarize the BPSG layer. <IMAGE></p> |
申请公布号 |
EP0774777(A1) |
申请公布日期 |
1997.05.21 |
申请号 |
EP19960307693 |
申请日期 |
1996.10.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARMACOST, MICHAEL DAVID;DOBUZINSKY, DAVID MARK;GAMBINO, JEFFERY PETER;JASO, MARK ANTHONY |
分类号 |
H01L21/768;H01L21/304;H01L21/321;(IPC1-7):H01L21/310 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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